FGY160T65SPD-F085
onsemi
onsemi
650V FS GEN3 TRENCH IGBT
$13.49
Available to order
Reference Price (USD)
1+
$11.48000
10+
$10.58300
450+
$8.58751
900+
$8.06250
1,350+
$7.45000
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FGY160T65SPD-F085
$13.49
Product details
Upgrade your power electronics with the FGY160T65SPD-F085 single IGBT transistor from onsemi. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The FGY160T65SPD-F085 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the FGY160T65SPD-F085 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 240 A
- Current - Collector Pulsed (Icm): 480 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
- Power - Max: 882 W
- Switching Energy: 12.4mJ (on), 5.7mJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 53ns/98ns
- Test Condition: 400V, 160A, 15V
- Reverse Recovery Time (trr): 132 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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