BLP9H10S-500AWTY
Ampleon USA Inc.

Ampleon USA Inc.
BLP9H10S-500AWT/OMP-780/REELDP
$53.77
Available to order
Reference Price (USD)
1+
$53.77000
500+
$53.2323
1000+
$52.6946
1500+
$52.1569
2000+
$51.6192
2500+
$51.0815
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Product details
Optimize your RF applications with the BLP9H10S-500AWTY RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLP9H10S-500AWTY handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The BLP9H10S-500AWTY is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The BLP9H10S-500AWTY ensures consistent operation across various frequencies. Ampleon USA Inc. has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the BLP9H10S-500AWTY is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the BLP9H10S-500AWTY from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 600MHz ~ 960MHz
- Gain: 18.3dB
- Voltage - Test: 300 mV
- Current Rating (Amps): 1.4µA
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 500W
- Voltage - Rated: 105 V
- Package / Case: OMP-780-6F-1
- Supplier Device Package: OMP-780-6F-1