BLC8G27LS-160AVJ
Ampleon USA Inc.
Ampleon USA Inc.
RF FET LDMOS 65V 14.3DB SOT12751
$72.64
Available to order
Reference Price (USD)
100+
$71.19360
Exquisite packaging
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BLC8G27LS-160AVJ
$72.64
Product details
Maximize your RF capabilities with the BLC8G27LS-160AVJ RF MOSFET transistor from Ampleon USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The BLC8G27LS-160AVJ handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The BLC8G27LS-160AVJ is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The BLC8G27LS-160AVJ ensures consistent operation across a wide frequency range. Ampleon USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the BLC8G27LS-160AVJ is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the BLC8G27LS-160AVJ from Ampleon USA Inc. for superior RF solutions.
General specs
- Product Status: Last Time Buy
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.5GHz ~ 2.69GHz
- Gain: 14.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 31.6W
- Voltage - Rated: 65 V
- Package / Case: SOT-1275-1
- Supplier Device Package: DFM6
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