TA9310E
Tagore Technology
Tagore Technology
PA RF GAN PWR 20W .03-4GHZ 32V
$49.99
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TA9310E
$49.99
Product details
Optimize your RF applications with the TA9310E RF MOSFET transistor from Tagore Technology, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The TA9310E handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The TA9310E is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The TA9310E ensures consistent operation across various frequencies. Tagore Technology has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the TA9310E is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the TA9310E from Tagore Technology for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 30MHz ~ 4GHz
- Gain: 17.5dB
- Voltage - Test: 32 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 20W
- Voltage - Rated: 120 V
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-QFN (5x6)
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