Infineon launches first industrial GaN transistor product family with integrated Schottky diode 2025-04-15 Infineon Technologies AG of Munich, Germany has launched what it says are the first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.
Infineon Introduces CoolSiC™ JFETs to Power the Future of Solid-State Distribution Systems 2025-05-06 CoolSiC™ JFETs ensure efficient, reliable performance with strong short-circuit tolerance, thermal stability in linear mode, and precise overvoltage control.
Infineon and Visteon collaborate on power conversion systems for EVs 2025-05-12 Infineon Technologies AG of Munich, Germany and automotive cockpit electronics supplier Visteon Corp of Van Buren Township, MI, USA have signed a memorandum of understanding (MOU) to advance the development of next-generation electric vehicle powertrains.
Infineon to supply power modules for EV traction inverters in Rivian’s R2 platform 2025-05-20 Infineon Technologies AG Munich, Germany is to supply silicon carbide (SiC) and silicon (Si) power modules from its HybridPACK Drive G2 family for traction inverters in the R2 platform of electric vehicle (EV) manufacturer Rivian Automotive Inc of Irvine, CA, USA.
Infineon Debuts First In-House JANS-Certified Radiation-Hardened GaN Transistors for Space Applications 2025-05-29 Infineon’s radiation-hardened GaN transistors are specifically designed for mission-critical applications in on-orbit satellites, crewed space missions, and deep-space exploration probes.
Infineon Advances GaN Leadership with Scalable 300mm Wafer Manufacturing Milestone 2025-07-03 Infineon’s manufacturing strategy primarily relies on an IDM model, controlling the entire semiconductor process from design to final product delivery.
