Mazda and ROHM Expand Collaboration to Develop Next-Generation Automotive Components Using GaN Power Semiconductors

Mazda Motor Corporation and ROHM Co., Ltd. have initiated a collaborative effort to develop automotive components incorporating gallium nitride (GaN) power semiconductors, which are widely regarded as the next generation of semiconductor technology.

Since 2022, Mazda and ROHM have been jointly developing inverters based on silicon carbide (SiC) power semiconductors as part of a cooperative framework focused on the design and production of electric drive units. Expanding upon this collaboration, they are now undertaking the development of automotive components utilizing GaN power semiconductors, with the goal of engineering cutting-edge components for future electric vehicles.

GaN is gaining recognition as an advanced material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN enables reduced power conversion losses and facilitates component miniaturization by supporting high-frequency operation. By leveraging these advantages, Mazda and ROHM will work together to integrate GaN technology into vehicle-wide solutions that enhance weight reduction and optimize design. Their objective is to refine this concept into a tangible package and introduce a demonstration model by FY2025, with full-scale practical implementation anticipated by FY2027.