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CAB006A12GM3

Wolfspeed, Inc.
CAB006A12GM3 Preview
Wolfspeed, Inc.
1200V 2B HALF-BRIDGE,ALN
$351.78
Available to order
Reference Price (USD)
1+
$351.78000
500+
$348.2622
1000+
$344.7444
1500+
$341.2266
2000+
$337.7088
2500+
$334.191
Exquisite packaging
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EMS 3-7 days

Wolfspeed, Inc. CAB006A12GM3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CAB006A12GM3

CAB006A12GM3

$351.78

Product details

The CAB006A12GM3 by Wolfspeed, Inc. is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the CAB006A12GM3 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the CAB006A12GM3. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 69mA
  • Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 20.4nF @ 800V
  • Power - Max: 10mW (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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