NXH010P120MNF1PTNG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$125.33
Available to order
Reference Price (USD)
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$125.33286
500+
$124.0795314
1000+
$122.8262028
1500+
$121.5728742
2000+
$120.3195456
2500+
$119.066217
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NXH010P120MNF1PTNG
$125.33
Product details
Discover the NXH010P120MNF1PTNG from onsemi, a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe NXH010P120MNF1PTNG features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the NXH010P120MNF1PTNG today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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