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W987D2HBJX7E TR

Winbond Electronics
W987D2HBJX7E TR Preview
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.67
Available to order
Reference Price (USD)
2,500+
$2.18391
Exquisite packaging
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Winbond Electronics W987D2HBJX7E TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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W987D2HBJX7E TR

W987D2HBJX7E TR

$2.67

Product details

Discover the W987D2HBJX7E TR by Winbond Electronics, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The W987D2HBJX7E TR features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The W987D2HBJX7E TR is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Winbond Electronics memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the W987D2HBJX7E TR, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Not For New Designs
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)

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