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11AA040T-I/MNY

Microchip Technology
11AA040T-I/MNY Preview
Microchip Technology
IC EEPROM 4KBIT SGL WIRE 8TDFN
$0.36
Available to order
Reference Price (USD)
3,300+
$0.24720
Exquisite packaging
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Microchip Technology 11AA040T-I/MNY is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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11AA040T-I/MNY

11AA040T-I/MNY

$0.36

Product details

Microchip Technology's 11AA040T-I/MNY represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability. Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The 11AA040T-I/MNY supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications. The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The 11AA040T-I/MNY serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions. Explore the capabilities of this Microchip Technology memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the 11AA040T-I/MNY to support your project development cycle.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100 kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)

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