Shopping cart

Subtotal: $0.00

SQJ416EP-T1_GE3

Vishay Siliconix
SQJ416EP-T1_GE3 Preview
Vishay Siliconix
MOSFET N-CH 100V 27A PPAK SO-8
$1.03
Available to order
Reference Price (USD)
3,000+
$0.39663
6,000+
$0.37089
15,000+
$0.35802
30,000+
$0.35100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SQJ416EP-T1_GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SQJ416EP-T1_GE3

SQJ416EP-T1_GE3

$1.03

Product details

Vishay Siliconix's SQJ416EP-T1_GE3 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The SQJ416EP-T1_GE3 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The SQJ416EP-T1_GE3 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Viewed products

IXYS

IXTX40P50P

$0.00 (not set)
STMicroelectronics

STB35N60DM2

$0.00 (not set)
Infineon Technologies

IRLU024NPBF

$0.00 (not set)
Fairchild Semiconductor

FDD6670A_NL

$0.00 (not set)
Infineon Technologies

SPP11N80C3XKSA1

$0.00 (not set)
Microchip Technology

APT6025SVRG

$0.00 (not set)
IXYS

IXTP1R6N100D2

$0.00 (not set)
Rohm Semiconductor

R6007JNXC7G

$0.00 (not set)
Texas Instruments

CSD19531Q5AT

$0.00 (not set)
Vishay Siliconix

SIHB22N60ET5-GE3

$0.00 (not set)
Top