CSD19531Q5AT
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
$2.24
Available to order
Reference Price (USD)
1+
$2.24000
500+
$2.2176
1000+
$2.1952
1500+
$2.1728
2000+
$2.1504
2500+
$2.128
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CSD19531Q5AT
$2.24
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (5x6)
- Package / Case: 8-PowerTDFN
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