SQD10N30-330H_4GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 300-V (D-S) 175C MOSFE
$1.72
Available to order
Reference Price (USD)
1+
$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
Exquisite packaging
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| EMS | 3-7 days |
Vishay Siliconix SQD10N30-330H_4GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SQD10N30-330H_4GE3
$1.72
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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