TPH4R50ANH1,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 100V 4.5MOHM SOP-ADV(N)
$1.72
Available to order
Reference Price (USD)
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$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
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TPH4R50ANH1,LQ
$1.72
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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