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SIR624DP-T1-GE3

Vishay Siliconix
SIR624DP-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 200V 18.6A PPAK SO-8
$1.26
Available to order
Reference Price (USD)
3,000+
$0.56908
6,000+
$0.54236
15,000+
$0.52328
Exquisite packaging
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Vishay Siliconix SIR624DP-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIR624DP-T1-GE3

SIR624DP-T1-GE3

$1.26

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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