IPW60R037P7XKSA1
Infineon Technologies
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Infineon Technologies
MOSFET N-CH 650V 76A TO247-3
$13.92
Available to order
Reference Price (USD)
1+
$12.68000
10+
$11.49200
240+
$9.59488
720+
$8.17181
1,200+
$7.22310
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.48mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3