SIHU4N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 4.3A IPAK
$0.77
Available to order
Reference Price (USD)
1+
$0.76890
500+
$0.761211
1000+
$0.753522
1500+
$0.745833
2000+
$0.738144
2500+
$0.730455
Exquisite packaging
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Vishay Siliconix SIHU4N80AE-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIHU4N80AE-GE3
$0.77
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
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