IPA045N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 64A TO220-FP
$3.21
Available to order
Reference Price (USD)
1+
$2.84000
10+
$2.57600
100+
$2.09870
500+
$1.66556
1,000+
$1.40569
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IPA045N10N3GXKSA1
$3.21
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 64A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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