SIHP11N80E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 12A TO220AB
$3.70
Available to order
Reference Price (USD)
1+
$3.91000
10+
$3.49000
100+
$2.86160
500+
$2.31720
1,000+
$1.95426
3,000+
$1.85655
5,000+
$1.78675
Exquisite packaging
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| EMS | 3-7 days |
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SIHP11N80E-GE3
$3.70
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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