TSM180N03PQ33 RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 25A 8PDFN
$1.02
Available to order
Reference Price (USD)
5,000+
$0.16110
10,000+
$0.15554
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TSM180N03PQ33 RGG
$1.02
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3x3)
- Package / Case: 8-PowerWDFN
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