Shopping cart

Subtotal: $0.00

SIHD4N80E-GE3

Vishay Siliconix
SIHD4N80E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 800V 4.3A DPAK
$1.84
Available to order
Reference Price (USD)
1+
$2.00000
10+
$1.81300
100+
$1.46780
500+
$1.15426
1,000+
$0.96615
2,500+
$0.90345
5,000+
$0.87210
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHD4N80E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIHD4N80E-GE3

SIHD4N80E-GE3

$1.84

Product details

Enhance your electronic designs with the SIHD4N80E-GE3 single MOSFET transistor from Vishay Siliconix, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SIHD4N80E-GE3 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SIHD4N80E-GE3 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SIHD4N80E-GE3 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Nexperia USA Inc.

BUK7Y18-75B,115

$0.00 (not set)
STMicroelectronics

SCTWA20N120

$0.00 (not set)
Toshiba Semiconductor and Storage

TK5A50D(STA4,Q,M)

$0.00 (not set)
Nexperia USA Inc.

PMV30XPEAR

$0.00 (not set)
Toshiba Semiconductor and Storage

TK290P60Y,RQ

$0.00 (not set)
Panjit International Inc.

PJD100N04_L2_00001

$0.00 (not set)
onsemi

NDT3055L

$0.00 (not set)
Fairchild Semiconductor

SFW9Z24TM

$0.00 (not set)
Diodes Incorporated

DMT10H072LFV-13

$0.00 (not set)
IXYS

IXFX120N25P

$0.00 (not set)
Top