SCTWA20N120
STMicroelectronics
STMicroelectronics
IC POWER MOSFET 1200V HIP247
$17.79
Available to order
Reference Price (USD)
600+
$9.26550
Exquisite packaging
Discount
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SCTWA20N120
$17.79
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™ Long Leads
- Package / Case: TO-247-3
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