Shopping cart

Subtotal: $0.00

SIHA24N65EF-GE3

Vishay Siliconix
SIHA24N65EF-GE3 Preview
Vishay Siliconix
N-CHANNEL 650V
$6.19
Available to order
Reference Price (USD)
1+
$6.19000
500+
$6.1281
1000+
$6.0662
1500+
$6.0043
2000+
$5.9424
2500+
$5.8805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHA24N65EF-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIHA24N65EF-GE3

SIHA24N65EF-GE3

$6.19

Product details

The SIHA24N65EF-GE3 single MOSFET from Vishay Siliconix represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The SIHA24N65EF-GE3 features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the SIHA24N65EF-GE3 delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack

Viewed products

Taiwan Semiconductor Corporation

TSM170N06CP ROG

$0.00 (not set)
Vishay Siliconix

SIHP240N60E-GE3

$0.00 (not set)
Infineon Technologies

BF2040RE6814

$0.00 (not set)
Vishay Siliconix

SI8457DB-T1-E1

$0.00 (not set)
Renesas Electronics America Inc

NP40N10VDF-E1-AY

$0.00 (not set)
Texas Instruments

CSD23381F4T

$0.00 (not set)
Infineon Technologies

IPB039N10N3GATMA1

$0.00 (not set)
Vishay Siliconix

SI3493BDV-T1-BE3

$0.00 (not set)
Wolfspeed, Inc.

C2M0280120D

$0.00 (not set)
Rohm Semiconductor

RSQ020N03TR

$0.00 (not set)
Top