IPB039N10N3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 160A TO263-7
$3.48
Available to order
Reference Price (USD)
1,000+
$1.43550
2,000+
$1.33650
5,000+
$1.28700
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| EMS | 3-7 days |
Infineon Technologies IPB039N10N3GATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPB039N10N3GATMA1
$3.48
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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