SIDR610EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 200 V (D-S) 175C MOSFE
$3.93
Available to order
Reference Price (USD)
1+
$3.93000
500+
$3.8907
1000+
$3.8514
1500+
$3.8121
2000+
$3.7728
2500+
$3.7335
Exquisite packaging
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| EMS | 3-7 days |
Vishay Siliconix SIDR610EP-T1-RE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIDR610EP-T1-RE3
$3.93
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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