SI2333DS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 4.1A SOT23-3
$0.91
Available to order
Reference Price (USD)
3,000+
$0.41000
6,000+
$0.39075
15,000+
$0.37700
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SI2333DS-T1-GE3
$0.91
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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