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SIA436DJ-T1-GE3

Vishay Siliconix
SIA436DJ-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 8V 12A PPAK SC70-6
$0.66
Available to order
Reference Price (USD)
3,000+
$0.27120
6,000+
$0.25360
15,000+
$0.24480
30,000+
$0.24000
Exquisite packaging
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EMS 3-7 days

Vishay Siliconix SIA436DJ-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIA436DJ-T1-GE3

SIA436DJ-T1-GE3

$0.66

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6

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