SIHB12N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 12A D2PAK
$2.17
Available to order
Reference Price (USD)
1+
$2.28000
10+
$2.06400
100+
$1.65830
500+
$1.28976
1,000+
$1.06865
2,500+
$0.99495
5,000+
$0.95810
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Vishay Siliconix SIHB12N60E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIHB12N60E-GE3
$2.17
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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