SI7613DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 35A PPAK1212-8
$1.13
Available to order
Reference Price (USD)
3,000+
$0.50840
6,000+
$0.48453
15,000+
$0.46748
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SI7613DN-T1-GE3
$1.13
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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