BSZ110N06NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 20A 8TSDSON
$1.02
Available to order
Reference Price (USD)
5,000+
$0.31556
10,000+
$0.30388
25,000+
$0.29750
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BSZ110N06NS3GATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BSZ110N06NS3GATMA1
$1.02
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerVDFN
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