Shopping cart

Subtotal: $0.00

SI4114DY-T1-E3

Vishay Siliconix
SI4114DY-T1-E3 Preview
Vishay Siliconix
MOSFET N-CH 20V 20A 8SO
$1.78
Available to order
Reference Price (USD)
2,500+
$0.87175
5,000+
$0.84150
12,500+
$0.82500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SI4114DY-T1-E3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SI4114DY-T1-E3

SI4114DY-T1-E3

$1.78

Product details

Enhance your electronic designs with the SI4114DY-T1-E3 single MOSFET transistor from Vishay Siliconix, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The SI4114DY-T1-E3 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the SI4114DY-T1-E3 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the SI4114DY-T1-E3 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Viewed products

onsemi

NTNS2K1P021ZTCG

$0.00 (not set)
Microchip Technology

MIC94053YC6-TR

$0.00 (not set)
Toshiba Semiconductor and Storage

TK290A65Y,S4X

$0.00 (not set)
onsemi

NTD4809NA-35G

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM05N03CW RPG

$0.00 (not set)
NXP USA Inc.

BUK954R4-80E,127

$0.00 (not set)
Infineon Technologies

IPI100N06S3L-03

$0.00 (not set)
NXP USA Inc.

BUK7506-75B,127

$0.00 (not set)
Infineon Technologies

SPB02N60S5ATMA1

$0.00 (not set)
Nexperia USA Inc.

PMV130ENEAR

$0.00 (not set)
Top