Shopping cart

Subtotal: $0.00

BUK954R4-80E,127

NXP USA Inc.
BUK954R4-80E,127 Preview
NXP USA Inc.
MOSFET N-CH 80V 120A TO220AB
$1.25
Available to order
Reference Price (USD)
1+
$1.25000
500+
$1.2375
1000+
$1.225
1500+
$1.2125
2000+
$1.2
2500+
$1.1875
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

NXP USA Inc. BUK954R4-80E,127 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BUK954R4-80E,127

BUK954R4-80E,127

$1.25

Product details

NXP USA Inc. presents the BUK954R4-80E,127, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The BUK954R4-80E,127 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The BUK954R4-80E,127 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

Viewed products

Infineon Technologies

IPI100N06S3L-03

$0.00 (not set)
NXP USA Inc.

BUK7506-75B,127

$0.00 (not set)
Infineon Technologies

SPB02N60S5ATMA1

$0.00 (not set)
Nexperia USA Inc.

PMV130ENEAR

$0.00 (not set)
Vishay Siliconix

SI2303CDS-T1-E3

$0.00 (not set)
IXYS Integrated Circuits Division

CPC3710CTR

$0.00 (not set)
Fairchild Semiconductor

FDD6035AL

$0.00 (not set)
onsemi

FDD4243-F085

$0.00 (not set)
Diodes Incorporated

DMP4065S-13

$0.00 (not set)
STMicroelectronics

STH170N8F7-2

$0.00 (not set)
Top