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SI3421DV-T1-GE3

Vishay Siliconix
SI3421DV-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 30V 8A 6TSOP
$0.54
Available to order
Reference Price (USD)
3,000+
$0.20234
6,000+
$0.19001
15,000+
$0.17768
30,000+
$0.16905
Exquisite packaging
Discount
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TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SI3421DV-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI3421DV-T1-GE3

SI3421DV-T1-GE3

$0.54

Product details

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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