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FDFME3N311ZT

onsemi
FDFME3N311ZT Preview
onsemi
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.23
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FDFME3N311ZT

FDFME3N311ZT

$0.23

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 299mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UMLP (1.6x1.6)
  • Package / Case: 6-UFDFN Exposed Pad

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