BSC0805LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 79A TDSON-8-6
$2.73
Available to order
Reference Price (USD)
1+
$2.73000
500+
$2.7027
1000+
$2.6754
1500+
$2.6481
2000+
$2.6208
2500+
$2.5935
Exquisite packaging
Discount
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BSC0805LSATMA1
$2.73
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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