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SI2318DS-T1-GE3

Vishay Siliconix
SI2318DS-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 40V 3A SOT23-3
$0.55
Available to order
Reference Price (USD)
3,000+
$0.20758
6,000+
$0.19493
15,000+
$0.18228
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$0.17342
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Vishay Siliconix SI2318DS-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI2318DS-T1-GE3

SI2318DS-T1-GE3

$0.55

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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