IPP041N04NGXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
$1.71
Available to order
Reference Price (USD)
1+
$1.37000
10+
$1.21500
100+
$0.96020
500+
$0.74466
1,000+
$0.58790
Exquisite packaging
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| EMS | 3-7 days |
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IPP041N04NGXKSA1
$1.71
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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