IRFIBE30GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 2.1A TO220-3
$2.96
Available to order
Reference Price (USD)
1+
$3.08000
50+
$2.50180
100+
$2.26040
500+
$1.77754
1,000+
$1.48787
2,500+
$1.39131
5,000+
$1.34303
Exquisite packaging
Discount
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IRFIBE30GPBF
$2.96
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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