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IXTA06N120P-TRL

IXYS
IXTA06N120P-TRL Preview
IXYS
MOSFET N-CH 1200V 600MA TO263
$4.54
Available to order
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$4.313
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IXYS IXTA06N120P-TRL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IXTA06N120P-TRL

IXTA06N120P-TRL

$4.54

Product details

Enhance your electronic designs with the IXTA06N120P-TRL single MOSFET transistor from IXYS, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IXTA06N120P-TRL features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IXTA06N120P-TRL particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IXTA06N120P-TRL represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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