IRFB9N65APBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 8.5A TO220AB
$2.98
Available to order
Reference Price (USD)
1+
$3.25000
10+
$2.91500
100+
$2.40920
500+
$1.97030
1,000+
$1.67772
3,000+
$1.59895
5,000+
$1.54268
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IRFB9N65APBF
$2.98
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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