IMZA65R057M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$16.62
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Infineon Technologies IMZA65R057M1HXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IMZA65R057M1HXKSA1
$16.62
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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