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IMZA65R057M1HXKSA1

Infineon Technologies
IMZA65R057M1HXKSA1 Preview
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$16.62
Available to order
Reference Price (USD)
1+
$16.62000
500+
$16.4538
1000+
$16.2876
1500+
$16.1214
2000+
$15.9552
2500+
$15.789
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IMZA65R057M1HXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

$16.62

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Vgs (Max): +20V, -2V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 133W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4

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