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IMZA65R057M1HXKSA1

Infineon Technologies
IMZA65R057M1HXKSA1 Preview
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$16.62
Available to order
Reference Price (USD)
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$16.62000
500+
$16.4538
1000+
$16.2876
1500+
$16.1214
2000+
$15.9552
2500+
$15.789
Exquisite packaging
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Infineon Technologies IMZA65R057M1HXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

$16.62

Product details

The IMZA65R057M1HXKSA1 from Infineon Technologies is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the IMZA65R057M1HXKSA1 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The IMZA65R057M1HXKSA1 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the IMZA65R057M1HXKSA1 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Vgs (Max): +20V, -2V
  • Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 133W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-3
  • Package / Case: TO-247-4

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