VS-GB200TS60NPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 209A INT-A-PAK
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$128.15467
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VS-GB200TS60NPBF
$0.00
Product details
Upgrade your power systems with the VS-GB200TS60NPBF transistor by Vishay General Semiconductor - Diodes Division. This discrete semiconductor product is engineered for high efficiency and durability, making it suitable for a wide range of applications. Its fast switching capability and low power loss ensure excellent performance in electronic circuits. The VS-GB200TS60NPBF is particularly effective in switch-mode power supplies, offering reliable voltage regulation. It is also used in motor control systems, providing smooth and efficient operation. Additionally, this transistor is a key component in LED lighting, ensuring energy-efficient illumination. For engineers looking for a high-quality transistor, the VS-GB200TS60NPBF is a top contender. Request more information today and discover how it can benefit your projects.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 209 A
- Power - Max: 781 W
- Vce(on) (Max) @ Vge, Ic: 2.84V @ 15V, 200A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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