APTGT50DH120T3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 277W SP3
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APTGT50DH120T3G
$0.00
Product details
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 277 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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