VS-GB200TH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 360A INT-A-PAK
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12+
$434.51000
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Vishay General Semiconductor - Diodes Division VS-GB200TH120N is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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VS-GB200TH120N
$0.00
Product details
Experience superior performance with the VS-GB200TH120N transistor module by Vishay General Semiconductor - Diodes Division. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The VS-GB200TH120N is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the VS-GB200TH120N is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 360 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 14.9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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