GB35XF120K
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 50A 284W
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GB35XF120K
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Product details
The GB35XF120K transistor from Vishay General Semiconductor - Diodes Division is a versatile component in the discrete semiconductor products category. Designed for high-speed switching and low power dissipation, this transistor is a reliable choice for various electronic circuits. Its robust design ensures long-term stability and performance, even under demanding conditions. The GB35XF120K is particularly effective in audio amplifiers, delivering clear and distortion-free sound. It also performs exceptionally well in power supply units, ensuring efficient voltage regulation. Another common application is in lighting systems, where it provides precise control over brightness and energy usage. For engineers and designers looking for a dependable transistor, the GB35XF120K is an excellent option. Contact us today to inquire about pricing and availability, and take the first step toward optimizing your electronic designs.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 284 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 3.475 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECONO2
- Supplier Device Package: -
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