VS-GB150TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 280A INT-A-PAK
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$133.66167
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VS-GB150TH120U
$0.00
Product details
The VS-GB150TH120U from Vishay General Semiconductor - Diodes Division is a high-performance IGBT module designed for demanding industrial applications. This advanced discrete semiconductor product offers superior efficiency and reliability, making it ideal for power conversion and motor control systems. With robust construction and optimized thermal management, the VS-GB150TH120U ensures consistent performance in harsh environments. Key features include low switching losses, high current capacity, and excellent thermal stability. These characteristics make it a preferred choice for engineers seeking durable and efficient solutions. The VS-GB150TH120U is widely used in renewable energy systems, such as solar inverters and wind turbines, where efficiency is critical. It also finds applications in industrial motor drives, providing precise control and energy savings. Additionally, this IGBT module is suitable for electric vehicle charging stations, ensuring fast and reliable power delivery. For detailed specifications and pricing, submit an inquiry today to learn how the VS-GB150TH120U can enhance your project.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 280 A
- Power - Max: 1147 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 12.7 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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