VS-GB100TH120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
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Reference Price (USD)
12+
$329.28333
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VS-GB100TH120U
$0.00
Product details
Discover the VS-GB100TH120U transistor module by Vishay General Semiconductor - Diodes Division, a standout in the discrete semiconductor products category. This high-performance component is designed for fast switching and low energy consumption, making it ideal for modern electronics. Its compact and robust design ensures easy integration and long-lasting performance. The VS-GB100TH120U is commonly used in consumer electronics, such as televisions and gaming consoles, for efficient power management. It also plays a vital role in automotive electronics, enhancing vehicle safety and performance. Additionally, this transistor module is utilized in telecommunications equipment, ensuring reliable signal processing. If you re looking for a high-quality transistor module, the VS-GB100TH120U is an excellent choice. Contact us today to learn more and place your order.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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