VS-FC420SA10
Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 435A SOT227
$25.37
Available to order
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$18.16400
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$16.73000
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 435A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.15mOhm @ 200A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 750µA
- Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 652W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC