IPN80R2K0P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL 800V 3A SOT223
$1.16
Available to order
Reference Price (USD)
3,000+
$0.40948
6,000+
$0.38425
15,000+
$0.37163
30,000+
$0.36475
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Infineon Technologies IPN80R2K0P7ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPN80R2K0P7ATMA1
$1.16
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
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