BAQ35-GS08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 140V 200MA SOD80
$0.36
Available to order
Reference Price (USD)
2,500+
$0.07084
5,000+
$0.06244
12,500+
$0.05404
25,000+
$0.05124
62,500+
$0.04844
125,000+
$0.04564
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BAQ35-GS08
$0.36
Product details
The BAQ35-GS08 by Vishay General Semiconductor - Diodes Division is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The BAQ35-GS08 also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the BAQ35-GS08 delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 140 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 nA @ 60 V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80 MiniMELF
- Operating Temperature - Junction: 175°C (Max)
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